參數(shù)資料
型號: Q67100-3039
廠商: SIEMENS AG
英文描述: 256K x 16-Bit EDO-Dynamic RAM
中文描述: 256K x 16位江戶動態(tài)隨機存儲器
文件頁數(shù): 22/53頁
文件大?。?/td> 418K
代理商: Q67100-3039
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
21
Timing Diagrams
(cont’d)
18. Random Row Read ( Interleaving Banks) with Precharge
18.1 CAS Latency = 2
18.2 CAS Latency = 3
19. Random Row Write ( Interleaving Banks) with Precharge
19.1 CAS Latency = 2
19.2 CAS Latency = 3
20. Full Page Read Cycle
20.1 CAS Latency = 2
20.2 CAS Latency = 3
21. Full Page Write Cycle
21.1 CAS Latency = 2
21.2 CAS Latency = 3
22. Precharge Termination of a Burst
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