參數(shù)資料
型號(hào): Q67100-3039
廠商: SIEMENS AG
英文描述: 256K x 16-Bit EDO-Dynamic RAM
中文描述: 256K x 16位江戶(hù)動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁(yè)數(shù): 31/53頁(yè)
文件大?。?/td> 418K
代理商: Q67100-3039
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
30
9.2 AC Parameters for a Read Timing
AC2
t
LZ
Hi-Z
DQ
Activate
Command
Bank A
Read with
Auto Precharge
Bank A
Command
DQM
Addr.
AP
t
RCD
t
t
AS
RAx
RAx
t
AH
CAx
RRD
t
Command
Bank B
Read with
Auto Precharge
Activate
Command
Bank B
Ax1
Ax0
Bx0
Activate
Command
Bank A
SPT03911
Bx1
t
AC2
OH
t
HZ
t
t
RAS
RC
t
RBx
RBx
RBx
HZ
t
RAy
RAy
T5
t
t
BS
WE
CAS
RAS
t
CS
CKE
CKS
t
CH
t
t
CS
CH
CL
CK2
CLK
T0
T1
T2
T3
T4
Precharge
Bank A
Begin Auto
Precharge
Bank B
Begin Auto
t
CKH
Burst Length = 2, CAS Latency = 2
T6
T7
T8
T10
T9
T11
T13
T12
RP
t
Precharge
Command
Bank A
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