參數(shù)資料
型號: Q67100-H3260
廠商: SIEMENS AG
英文描述: NONVOLATILE MEMORY 8-KBIT EPROM WITH IC BUS INTERFACE
中文描述: 非易失性內(nèi)存8千比特存儲器總線接口帶IC
文件頁數(shù): 45/53頁
文件大?。?/td> 418K
代理商: Q67100-H3260
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
44
18. Random Row Read (Interleaving Banks) with Precharge
18.1 CAS Latency = 2
Ax2
t
BS
Addr.
DQ
DQM
AP
Bank B
Activate
Command
Hi-Z
Command
Bank B
Read
RBx
RBx
RCD
t
CBx
Read
Command
Activate
Command
Bank B
Bank A
Command
Bank A
Bx2
Bx0
AC2
Bx1
Activate
Bx3
Bx4
RAx
RAx
Command
Bank B
Precharge
Bx6
Bx5
Bx7
Ax0
Ax1
CAx
RP
t
RBy
RBy
CS
WE
CAS
RAS
CKE
CLK
T0
High
t
CK2
T1
T2
T8
T4
T3
T5
T6
T7
T11
T9
T10
T12
T13
SPT03925
Bank B
Command
Ax5
Ax3
Ax4
Read
Ax6
Ax7
CBy
By1
By0
Burst Length = 8, CAS Latency = 2
T19
T16
T15
T14
T17
T18
T20
T21 T22
相關PDF資料
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Q67100-H5101 NONVOLATILE MEMORY 8-KBIT EPROM WITH IC BUS INTERFACE
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