參數(shù)資料
型號: Q67100-H5101
廠商: SIEMENS AG
英文描述: NONVOLATILE MEMORY 8-KBIT EPROM WITH IC BUS INTERFACE
中文描述: 非易失性內(nèi)存8千比特存儲器總線接口帶IC
文件頁數(shù): 26/53頁
文件大?。?/td> 418K
代理商: Q67100-H5101
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
25
5. Burst Write Operation
Extra data is ignored after
termination of a Burst.
DIN A3
T4
are registered on the same clock edge.
The first data element and the Write
NOP
(Burst Length = 4, CAS latency = 2, 3)
T0
Command
DQ’s
CLK
DIN A1
T2
NOP
DIN A0
Write A
T1
DIN A2
NOP
T3
SPT03790
T6
NOP
NOP
T5
NOP
NOP
T7
NOP
T8
don’t care
相關(guān)PDF資料
PDF描述
Q67100-Q1019 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
Q67100-Q1030 1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
Q67100-Q1044 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Q67100-Q1049 4M x 4-Bit Dynamic RAM
Q67100-Q1050 CAP 6.8UF 35V 20% TANT SMD-7343-31 TR-7
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