參數(shù)資料
型號： Q67100-Q2009
廠商： SIEMENS AG
英文描述： 1M x 32-Bit Dynamic RAM Module
中文描述： 100萬× 32位動態(tài)隨機(jī)存儲器模塊
文件頁數(shù)： 15/53頁
文件大小： 418K
代理商： Q67100-Q2009
HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
15
12.99
Electrical Characteristics
Absolute Maximum Ratings
Operating Temperature Range.......................................................................................0 to + 70
°
C
Storage Temperature Range..................................................................................
– 55 to + 150
°
C
Input/Output Voltage......................................................................................... – 0.3 to
V
DD
+ 0.3 V
Power Supply Voltage
V
DD
/
V
DDQ
.............................................................................. – 0.3 to + 4.6 V
Power Dissipation....................................................................................................................... 1 W
Data Out Current (short circuit)............................................................................................... 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Notes
1. All voltages are referenced to
V
SS
2.
V
IH
may overshoot to
V
DD
+ 2.0 V for pulse width of < 4 ns with 3.3 V.
V
IL
may undershoot to
– 2.0 V for pulse width < 4.0 ns with 3.3 V. Pulse width measured at 50% points with amplitude
measured peak to DC reference.
Recommended Operation and DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
,
V
DDQ
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
V
DD
+ 0.3
0.8
Input High Voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
V
1, 2
Input Low Voltage
Output High Voltage (
I
OUT
= – 4.0 mA)
Output Low Voltage (
I
OUT
= 4.0 mA)
Input Leakage Current, any input
(0 V <
V
IN
<
V
DDQ
, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
– 0.3
V
1, 2
2.4
–
V
–
–
0.4
V
μ
A
–
– 5
5
–
I
O(L)
– 5
5
μ
A
–
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Values
Unit
min.
max.
Input Capacitance (CLK)
C
I1
C
I2
2.5
3.5
pF
Input Capacitance
(A0 - A11, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
2.5
3.8
pF
Input/Output Capacitance (DQ)
C
IO
4.0
6.0
pF
相關(guān)PDF資料
PDF描述
Q67100-Q2010 1M x 32-Bit Dynamic RAM Module
Q67100-Q2012 1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
Q67100-Q2014 2M x 32-Bit Dynamic RAM Module
Q67100-Q2015 2M x 32-Bit Dynamic RAM Module
Q67100-Q2016 2M x 32-Bit Dynamic RAM Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67100-Q2010 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 32-Bit Dynamic RAM Module
Q67100-Q2012 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
Q67100-Q2014 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
Q67100-Q2015 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
Q67100-Q2016 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
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