參數(shù)資料
型號(hào): Q67100-Q2009
廠商: SIEMENS AG
英文描述: 1M x 32-Bit Dynamic RAM Module
中文描述: 100萬(wàn)× 32位動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊
文件頁(yè)數(shù): 51/53頁(yè)
文件大小: 418K
代理商: Q67100-Q2009
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
50
21. Full Page Write Cycle
21.1 CAS Latency = 2
T14
DBx
~
Command
Bank B
Activate
Addr.
AP
DQM
DQ
Command
Bank A
Activate
Write
Command
Bank A
Hi-Z
RAx
RAx
DAx
DAx 1
CAx
page address back to zero
during this time interval.
the burst counter increments and continues
bursting beginning with the starting address.
CBx
DBx
Write
Command
Bank B
terminate when the burst length is satisfied;
from the highest order
The burst counter wraps
1
DAx
+
DAx 2
~
+3
~
DAx-
~
RBx
RBx
~
~
~
DAx
DAx+1
Full Page burst operation does not
Data is
ignored.
DBx
DBx+1
+
DBx 2
4
3
DBx+
DBx 5
T3
CLK
CKE
CS
CAS
RAS
BS
WE
T0
High
CK2
t
T1
T2
~
~
~
~
~
~
~
~
~
~
~
~
~
T4
~
T5
T7
T6
T8
T10
T9
T11
T13
T12
SPT03931
Precharge
Command
Bank B
Burst Stop
Command
Command
Bank B
Activate
+6
RBy
RBy
T20
T17
T15
T16
T18
T19
T21 T22
Burst Length = Full Page, CAS Latency = 2
相關(guān)PDF資料
PDF描述
Q67100-Q2010 1M x 32-Bit Dynamic RAM Module
Q67100-Q2012 1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
Q67100-Q2014 2M x 32-Bit Dynamic RAM Module
Q67100-Q2015 2M x 32-Bit Dynamic RAM Module
Q67100-Q2016 2M x 32-Bit Dynamic RAM Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67100-Q2010 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 32-Bit Dynamic RAM Module
Q67100-Q2012 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
Q67100-Q2014 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
Q67100-Q2015 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
Q67100-Q2016 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module