參數(shù)資料
型號(hào): Q67100-Q749
廠商: SIEMENS AG
英文描述: 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
中文描述: 100萬(wàn)× 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器的低功耗100萬(wàn)× 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁(yè)數(shù): 24/53頁(yè)
文件大?。?/td> 418K
代理商: Q67100-Q749
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
23
3. Read Interrupted by a Read
4. Read to Write Intrerval
4.1 Read to Write Interval
SPT03713
CLK
Read A
T0
T1
T2
T3
T4
T5
T6
T7
T8
Command
DOUT A0
DOUT B0
DOUT B1 DOUT B2
NOP
NOP
NOP
NOP
NOP
NOP
NOP
latency = 2
, DQ’s
CK2
t
CK3
latency = 3
t
, DQ’s
(Burst Length = 4, CAS latency = 2, 3)
CAS
CAS
Read B
DOUT B3
DOUT B1
DOUT A0
DOUT B0
DOUT B3
DOUT B2
Commands = 4 + 1 = 5 cycles
Minimum delay between the Read and Write
DOUT A0
DQ’s
(Burst Length = 4, CAS latency = 3)
DQMx
Command
CLK
NOP
Read A
T0
T1
NOP
NOP
T2
T3
the Write Command
Must be Hi-Z before
DIN B0
DIN B1
SPT03787
DIN B2
DQW
NOP
DQZ
t
NOP
t
T4
T5
Write B
NOP
T6
T7
NOP
T8
"H" or "L"
Write latency
of DQMx
相關(guān)PDF資料
PDF描述
Q67100-H3500 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
Q67100-H3501 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
Q67100-H3502 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode
Q67100-H3503 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode
Q67100-H3504 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode
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