參數(shù)資料
型號: Q67100-Q749
廠商: SIEMENS AG
英文描述: 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
中文描述: 100萬× 4位動態(tài)隨機(jī)存儲器的低功耗100萬× 4位動態(tài)隨機(jī)存儲器
文件頁數(shù): 28/53頁
文件大?。?/td> 418K
代理商: Q67100-Q749
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
27
7. Burst Write and Read with Auto Precharge
7.1 Burst Write with Auto-Precharge
7.2 Burst Read with Auto-Precharge
COMMAND
NOP
NOP
NOP
WRITE A
Auto-Precharge
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
BANK A
ACTIVE
NOP
NOP
DIN A0
DIN A1
DIN A0
DIN A1
*
*
DQ’s
CAS latency = 2
DQ’s
CAS latency = 3
Begin Autoprecharge
Bank can be reactivated after trp
t
WR
t
WR
t
RP
t
RP
NOP
COMMAND
READ A
with AP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
t
CK2,
DQ’s
CAS latency = 2
t
CK3,
DQ’s
CAS latency = 3
NOP
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT A0
DOUT A1
DOUT A2
*
*
DOUT A0
DOUT A1
DOUT A2
DOUT A3
Begin Autoprecharge
Bank can be reactivated after trp
t
RP
t
RP
(Burst Length = 4, CAS latency = 2,3)
相關(guān)PDF資料
PDF描述
Q67100-H3500 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
Q67100-H3501 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
Q67100-H3502 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode
Q67100-H3503 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode
Q67100-H3504 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode
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