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參數(shù)資料
| 型號(hào)： | QM15KD-HB |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 89K |
| 代理商： | QM15KD-HB |
Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0
10
10
2.0
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
1
0
10
–1
10
–2
10
7
–3
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
3
10
2
10
0
10
1
10
–1
10
–2
10
–1
10
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
0
10
2
10
7
5
4
3
2
10
7
5
4
3
2
2 3 4 5 7
2 3 4 5 7
0
10
t
s
T
j
=25°C
T
j
=125°C
I
C
=15A
I
B1
=90mA
V
CC
=300V
t
f
00
200
400
800
100
300
20
500 600 700
8
4
12
16
24
28
32
T
j
=125°C
I
B2
=–3.0A
I
B2
=–0.5A
7
5
3
2
7
5
3
2
7
5
3
2
1s
DC
100μs
t
w
=0s
2
10
10
7
5
4
3
2
0
0.4
10
7
5
4
3
2
0.8
1.2
1.6
2.0
2.4
T
j
=25°C
T
j
=125°C
7
5
3
2
7
5
3
2
5
3
2
0.2
0.4
0.6
1.0
1.2
1.4
1.6
0
7
5
3
2
0.8
1.8
T
C
=25°C
NON-REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM15TB-2HB | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TB-2H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TB2H | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
| QM15TB2HB | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM15TB2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
| QM15TB-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TB2HB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
| QM15TB-2HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TD-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
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