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參數(shù)資料
| 型號： | QM15KD-HB |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率開關使用絕緣型 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 89K |
| 代理商： | QM15KD-HB |
Feb.1999
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
2
10
10
7
5
4
3
2
10
7
5
4
3
2
0
100
200
300
400
500
0.8
1.2
1.6
2.0
2.4
T
j
=25°C
100
80
60
40
20
00
8
16
24
32
40
160
140
120
100
80
600
8
16
24
32
40
RESISTIVE, INDUCTIVE LOAD
RESISTIVE, INDUCTIVE LOAD
P
P
MAXIMUM POWER DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. DC OUTPUT CURRENT
DC OUTPUT CURRENT
I
O
(A)
DC OUTPUT CURRENT
I
O
(A)
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
MAXIMUM FORWARD CHARACTERISTIC
F
I
F
FORWARD VOLTAGE DROP
V
F
(V)
PERFORMANCE CURVES (Diode parts)
S
C
I
F
ALLOWABLE SURGE (NON-REPETITIVE)
FORWARD CURRENT
CONDUCTION TIME (CYCLES AT 60H
Z
)
C
T
C
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| QM15TB-2HB | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TB-2H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TB2H | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
| QM15TB2HB | TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
| QM15TD-HB | MEDIUM POWER SWITCHING USE INSULATED TYPE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| QM15TB2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
| QM15TB-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TB2HB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C) |
| QM15TB-2HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM15TD-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
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