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參數(shù)資料
| 型號(hào)： | QM30HA-H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | CAP CER 10000PF 100V X7R 10%0805 |
| 中文描述： | 中功率開(kāi)關(guān)使用絕緣型 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | QM30HA-H |
Feb.1999
ABSOLUTE MAXIMUM RATINGS
(Tj=25
°
C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(Tj=25
°
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
μ
s
μ
s
μ
s
°
C/W
°
C/W
°
C/W
Limits
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
T
j
T
stg
V
iso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
°
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M4
Mounting screw M5
Typical value
Ratings
600
600
600
7
30
30
250
1.8
300
–40~+150
–40~+125
2500
0.98~1.47
10~15
1.47~1.96
15~20
90
Unit
V
V
V
V
A
A
W
A
A
°
C
°
C
V
N·m
kg·cm
N·m
kg·cm
g
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=600V, V
EB
=2V
V
CB
=600V, Emitter open
V
EB
=7V
I
C
=30A, I
B
=0.4A
–I
C
=30A (diode forward voltage)
I
C
=30A, V
CE
=2V/5V
V
CC
=300V, I
C
=30A, I
B1
=–I
B2
=0.6A
Transistor part
Diode part
Conductive grease applied
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
200
2.0
2.5
1.85
—
1.5
12
3.0
0.5
2.0
0.15
MITSUBISHI TRANSISTOR MODULES
QM30HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM30HC-2H | INDUCTION HEATER USE NON-INSULATED TYPE |
| QM30HC2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.6KV V(BR)CEO | 30A I(C) |
| QM30HQ24 | TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CEO | 30A I(C) |
| QM30HY2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 30A I(C) |
| QM30HQ-24 | DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM30HA-HB | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM30HC2H | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.6KV V(BR)CEO | 30A I(C) |
| QM30HC-2H | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:INDUCTION HEATER USE NON-INSULATED TYPE |
| QM30HQ24 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CEO | 30A I(C) |
| QM30HQ-24 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE |
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