參數(shù)資料
型號(hào): QM30HA-H
廠商: Mitsubishi Electric Corporation
英文描述: CAP CER 10000PF 100V X7R 10%0805
中文描述: 中功率開(kāi)關(guān)使用絕緣型
文件頁(yè)數(shù): 5/5頁(yè)
文件大?。?/td> 61K
代理商: QM30HA-H
Feb.1999
0
10
–1
10
–2
10
–3
10
1
10
7
0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
10
0
10
1
10
2
10
–1
10
10
1
10
0
10
2
10
2
10
10
7
5
4
3
2
10
7
5
4
3
2
0
100
200
300
400
500
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=–I
B2
=0.6A
I
rr
Q
rr
t
rr
7
5
3
2
7
5
3
2
7
5
3
2
0.4
0.8
1.2
1.6
2.0
0
3
2
5
3
2
4
4
4
4
4
5
I
r
r
μ
c
S
C
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM30HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
t
r
μ
s
相關(guān)PDF資料
PDF描述
QM30HC-2H INDUCTION HEATER USE NON-INSULATED TYPE
QM30HC2H TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.6KV V(BR)CEO | 30A I(C)
QM30HQ24 TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CEO | 30A I(C)
QM30HY2H TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 30A I(C)
QM30HQ-24 DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QM30HA-HB 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE
QM30HC2H 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.6KV V(BR)CEO | 30A I(C)
QM30HC-2H 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:INDUCTION HEATER USE NON-INSULATED TYPE
QM30HQ24 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CEO | 30A I(C)
QM30HQ-24 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE