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參數(shù)資料
| 型號： | QM50DY-H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 70K |
| 代理商： | QM50DY-H |
Feb.1999
10
10
7
5
4
3
2
–1
10
7
5
4
3
2
1.2
1.6
2.0
2.4
2.8
3.2
V
CE
=2.0V
T
j
=25°C
100
80
60
40
20
00
1
2
3
4
5
T
j
=25°C
I
B
=0.3A
I
B
=0.1A
I
B
=1A
I
B
=0.2A
I
B
=0.65A
3
10
7
5
4
3
2
2
10
7
5
4
3
2
1
10
10
0
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE
=2.0V
T
j
=25°C
T
j
=125°C
V
CE
=5.0V
1
10
7
5
4
3
2
10
7
5
4
3
2
–1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE(sat)
V
BE(sat)
T
j
=25°C
T
j
=125°C
I
B
=0.65A
1
10
7
5
4
3
2
10
7
5
4
3
2
2
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
T
j
=25°C
T
j
=125°C
t
f
t
on
t
s
V
CC
=300V
I
B1
=–I
B2
=1A
10
–1
10
7
5
4
3
2
–2
10
7
5
4
3
2
0
1
2
3
4
5
T
j
=25°C
T
j
=125°C
I
C
=30A
I
C
=20A
I
C
=50A
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
C
I
C
D
h
F
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
B
I
B
C
V
V
C
S
V
C
,
B
S
t
o
,
s
,
f
μ
s
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM50DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM50DY24 | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 50A I(C) |
| QM50DY24B | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 50A I(C) |
| QM50E2Y-H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50E2Y | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50E2Y2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM50DY-HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50E2Y | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50E2Y2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
| QM50E2Y-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50E2Y-HD | 制造商:Mitsubishi Electric 功能描述: |
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