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參數(shù)資料
| 型號(hào)： | QM50DY-H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率開(kāi)關(guān)使用絕緣型 |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | QM50DY-H |
Feb.1999
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TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE )
RATED SURGE COLLECTOR REVERSE CURRENT
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REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
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TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM50DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM50DY24 | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 50A I(C) |
| QM50DY24B | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 50A I(C) |
| QM50E2Y-H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50E2Y | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50E2Y2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM50DY-HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50E2Y | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50E2Y2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
| QM50E2Y-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50E2Y-HD | 制造商:Mitsubishi Electric 功能描述: |
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