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參數(shù)資料
| 型號(hào)： | QM50E2Y |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 89K |
| 代理商： | QM50E2Y |
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
C
V
V
C
S
t
o
,
s
,
f
μ
s
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
C
I
C
C
I
C
D
2
10
1
10
0
10
–1
10
10
3
10
2
10
1
10
0
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
7
0
10
1
10
7
5
4
3
2
10
7
5
4
3
10
3 4 5
2 3 4 5 7
1
10
3
2
–1
2
t
f
T
j
=25°C
T
j
=125°C
I
C
=50A
I
B1
=1A
V
CC
=300V
t
s
160
00
200
400
600
800
120
80
40
20
60
100
140
T
j
=125°C
I
B2
=–1A
–3A
–5A
–1
10
7
5
4
3
2
–2
10
7
5
4
3
2
0
1
2
3
4
5
10
T
j
=25°C
T
j
=125°C
I
C
=30A
I
C
=20A
I
C
=50A
1
10
7
5
4
3
2
10
7
5
4
3
2
10
0
2 3 4 5 7
1
10
2 3 4 5 7
2
10
2
T
j
=25°C
T
j
=125°C
t
on
t
f
I
B1
=–I
B2
=1A
V
CC
=300V
t
s
COLLECTOR
DISSIPATION
SECOND BREAK-
DOWN AREA
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
C
=25°C
NON-REPETITIVE
1m
DC
10ms
500μs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM50E2Y2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
| QM50E3Y2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
| QM50HA-HB | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50HA-H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50HY-2H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM50E2Y2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
| QM50E2Y-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50E2Y-HD | 制造商:Mitsubishi Electric 功能描述: |
| QM50E3Y2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
| QM50E3Y-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
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