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參數(shù)資料
| 型號(hào)： | QM50E2Y |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率開(kāi)關(guān)使用絕緣型 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大小： | 89K |
| 代理商： | QM50E2Y |
Feb.1999
I
r
r
μ
C
S
I
F
REVERSE RECOVERY CHARACTERISTICS
(VS. di/dt) (TYPICAL)
MAXIMUM SURGE CURRENT
REVERSE RECOVERY CHARACTERISTICS
(VS. I
F
) (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
di/dt (A/
μ
s)
I
r
r
μ
C
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
MAXIMUM FORWARD CHARACTERISTIC
F
I
F
FORWARD VOLTAGE
V
F
(V)
PERFORMANCE CURVES (Diode part (D2))
Z
t
°
C
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
10
10
1.0
TIME (s)
t
r
μ
s
t
r
μ
s
2
10
1
10
0
10
2
10
1
10
0
10
–1
10
10
0
1
10
2
10
3
10
–1
10
–1
10
3
10
2
10
1
10
0
10
–1
10
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
2
10
1
10
0
0
–3
10
–2
10
–1
10
0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
2
10
1
10
7
5
4
3
2
10
7
5
4
3
2
0
200
400
600
800
1000
0.6
1.0
1.4
1.8
2.2
T
j
=25°C
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0.4
0.6
0.8
0
5
3
2
7
5
3
2
4
4
4
4
4
7
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
V
R
=300V
di/dt=–100A/μs
I
rr
Q
rr
t
rr
T
j
=25°C
T
j
=150°C
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
j
=25°C
T
j
=150°C
V
R
=300V
I
F
=50A
I
rr
Q
rr
t
rr
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM50E2Y2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
| QM50E3Y2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
| QM50HA-HB | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50HA-H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50HY-2H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM50E2Y2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
| QM50E2Y-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50E2Y-HD | 制造商:Mitsubishi Electric 功能描述: |
| QM50E3Y2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
| QM50E3Y-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
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