參數(shù)資料
型號(hào): QM50HA-HB
廠商: Mitsubishi Electric Corporation
英文描述: MEDIUM POWER SWITCHING USE INSULATED TYPE
中文描述: 中功率開關(guān)使用絕緣型
文件頁數(shù): 3/5頁
文件大?。?/td> 77K
代理商: QM50HA-HB
Feb.1999
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
C
I
C
D
h
F
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
B
I
B
C
V
V
C
S
V
C
,
B
S
t
o
,
s
,
f
μ
s
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM50HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
–1
10
10
0
10
–1
10
–2
10
–3
10
–1
10
10
–2
2.2
10
–1
10
10
7
5
4
3
2
7
5
4
3
2
2.6
3.0
3.4
3.8
4.2
V
CE
=2.5V
T
j
=25°C
100
80
60
40
20
00
1
2
3
4
5
T
j
=25°C
I
B
=150mA
I
B
=50mA
I
B
=20mA
I
B
=10mA
I
B
=100mA
4
10
7
5
4
3
2
3
10
7
5
4
3
2
2
10
10
0
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE
=5.0V
V
CE
=2.5V
T
j
=25°C
T
j
=125°C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
BE(sat)
V
CE(sat)
I
B
=67mA
T
j
=25°C
T
j
=125°C
7
5
3
2
7
5
3
2
7
5
3
2
5
4
3
2
1
0
T
j
=25°C
T
j
=125°C
I
C
=10A
I
C
=25A
I
C
=50A
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
2 3 4 5 7
1
10
2 3 4 5 7
2
10
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=100mA
I
B2
=–1.0A
t
f
t
on
t
s
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