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參數資料
| 型號： | QM50HA-HB |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率開關使用絕緣型 |
| 文件頁數： | 5/5頁 |
| 文件大?。?/td> | 77K |
| 代理商： | QM50HA-HB |
Feb.1999
I
r
r
μ
c
S
–
C
t
r
μ
s
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
1
10
10
3
2
7
5
3
2
2.0
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
Z
t
°
C
MITSUBISHI TRANSISTOR MODULES
QM50HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
0
–1
10
–2
10
7
–3
10
0
10
–1
10
3
10
2
10
1
10
0
10
1
10
2
10
0
10
–1
10
0
7
5
3
2
10
1
7
5
3
2
10
2
7
5
3
2
10
2
10
10
7
5
4
3
2
10
7
5
4
3
2
0
100
200
300
400
500
7
5
3
2
7
5
3
2
7
5
3
2
V
CC
=300V
I
B1
=100mA
I
B2
=–1.0A
I
rr
Q
rr
t
rr
T
j
=25°C
T
j
=125°C
7
5
3
2
7
5
3
2
5
3
2
0
0.4
5
0.8
1.2
1.6
7
相關PDF資料 |
PDF描述 |
|---|---|
| QM50HA-H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50HY-2H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50HY2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
| QM50TB-24B | 122 x 32 pixel format, Compact LCD size |
| QM50TB-24 | 122 x 32 pixel format, Compact LCD size |
相關代理商/技術參數 |
參數描述 |
|---|---|
| QM50HY2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
| QM50HY-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50HY-H | 制造商:n/a 功能描述:Darlington Module |
| QM50TB24 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CEO | 50A I(C) |
| QM50TB-24 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
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