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參數(shù)資料
| 型號： | QM75DY-H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 79K |
| 代理商： | QM75DY-H |
Feb.1999
0
10
1
10
–1
10
–2
10
1
10
10
7
5
4
3
2
–1
10
7
5
4
3
2
1.0
1.4
1.8
2.2
2.6
3.0
V
CE
=2.0V
T
j
=25°C
3
10
7
5
4
3
2
2
10
7
5
4
3
2
2
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
T
j
=25°C
T
j
=125°C
V
CE
=5.0V
V
CE
=2.0V
200
160
120
80
40
00
1
2
3
4
5
T
j
=25°C
I
B
=1.0A
I
B
=2.0A
I
B
=1.5A
I
B
=0.5A
1
10
7
5
4
3
2
10
7
5
4
3
2
–1
10
1
10
2 3 4 5 7
2
10
2 3 4 5 7
3
10
T
j
=25°C
T
j
=125°C
I
B
=1A
V
CE(sat)
V
BE(sat)
1
10
7
5
4
3
2
0
10
7
5
4
3
2
2
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
t
f
t
on
t
s
I
B1
=300V
B2
=1.5A
T
j
=25°C
T
j
=125°C
V
CC
0
7
5
3
2
7
5
3
2
7
5
3
2
5
4
3
2
1
4
4
4
T
j
=25°C
T
j
=125°C
I
C
=75A
I
C
=30A
I
C
=100A
I
C
=50A
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
C
I
C
D
h
F
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
B
I
B
C
V
V
C
S
V
C
,
B
S
t
o
,
s
,
f
μ
s
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM75DY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM75DY24 | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 75A I(C) |
| QM75DY24B | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 75A I(C) |
| QM75DY2HB | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 75A I(C) |
| QM75E2Y-2H | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75E2Y-H | HIGH POWER SWITCHING USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM75DY-HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75E2Y2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 75A I(C) |
| QM75E2Y-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75E2Y-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75E3Y2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 75A I(C) |
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