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參數(shù)資料
| 型號(hào)： | QM75DY-H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | QM75DY-H |
Feb.1999
1
10
0
10
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10
–2
10
7
–1
10
0
10
–1
10
1
10
0
10
2
10
10
7
5
4
3
2
10
7
5
4
3
2
0
800
700
600
500
400
300
200
100
7
5
3
2
7
5
3
2
5
3
2
2.0
1.6
1.2
0.8
0.4
0
4
4
4
2 3 45 7
7
5
3
2
4
2
10
7
5
4
3
2
10
7
5
4
3
2
0
10
10
0
2 3 4 5 7
1
10
2 3 4 5 7
10
V
CC
=300V
I
B1
=–I
B2
=1.5A
T
j
=25°C
T
j
=125°C
I
rr
t
rr
Q
rr
I
r
r
μ
c
S
–
C
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM75DY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
t
r
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM75DY24 | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 75A I(C) |
| QM75DY24B | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 75A I(C) |
| QM75DY2HB | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 75A I(C) |
| QM75E2Y-2H | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75E2Y-H | HIGH POWER SWITCHING USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM75DY-HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75E2Y2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 75A I(C) |
| QM75E2Y-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75E2Y-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM75E3Y2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 75A I(C) |