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參數(shù)資料
| 型號(hào)： | QS5U27 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Small switching (−20V, −1.5A) |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 48K |
| 代理商： | QS5U27 |
QS5U27
Transistor
Small switching (
20V,
1.5A)
1/3
QS5U27
!
Features
1) The QS5U27 conbines Pch Treueh MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Pch Treueh MOSFET have a low on-state resisternce
with a fast switching.
3) Pch Treueh MOSFET is neucted a low voltage drive
(2.5V).
4) The independently connected Schottky barrier diode
have a low forward voltage.
!
Applications
load switch, DC/DC conversion
!
External dimensions
(Units : mm)
TSMT5
0
2
2.8
1
1.6
0
0
0
(
(
(
(
(
0.3~0.6
0
1
0
0
Each lead has same dimensions
Abbreviated symbol : U27
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
!
Structure
Silicon P-channel MOS FET
Schottky Barrier DIODE
!
Packaging specifications
QS5U27
TR
3000
Type
Package
Code
Taping
Basic ordering unit (pieces)
!
Equivalent circuit
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
2
1
(1)
(2)
(3)
(5)
(4)
A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
1 ESD protection diode
2 Body diode
!
Absolute maximum ratings
(Ta=25
°
C)
<
MOSFET
>
1
1
3
2
Parameter
V
V
A
A
A
A
°
C
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
Tch
Symbol
20
±
12
±
1.5
±
6.0
0.75
3.0
150
V
V
A
A
°
C
V
RM
V
R
I
F
I
FSM
Tj
25
20
1.0
3.0
125
P
D
Tstg
1.0
°
C
40~
+
125
Limits
Unit
W/ TOTAL
1 Pw
≤
10
μ
s, Duty cycle
≤
1%
2 60Hz
1cyc.
3 Mounted on a ceramic board.
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
<
Di
>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
<
MOSFET AND Di
>
Total power dispation
Range of strage temperature
Continuous
Pulsed
Continuous
Pulsed
Parameter
Symbol
Limits
Unit
Parameter
Symbol
Limits
Unit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QS5U27TR | 功能描述:MOSFET P-CH 20V 1.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| QS5U28 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Small switching (−20V, −2.0A) |
| QS5U28_06 | 制造商:ROHM 制造商全稱:Rohm 功能描述:2.5V Drive PchSBD MOS FET |
| QS5U28TR | 功能描述:MOSFET P-CH 20V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| QS5U33 | 制造商:ROHM 制造商全稱:Rohm 功能描述:4V Drive Pch+SBD MOSFET |
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