參數(shù)資料
型號(hào)： QS5U27
廠商： Rohm CO.,LTD.
英文描述： Small switching (−20V, −1.5A)
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 48K
代理商： QS5U27
QS5U27
Transistor
!
Electrical characteristics
(Ta=25
°
C)
2/3
Parameter
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Min.
20
0.7
1.0
±
10
1
2.0
200
240
340
μ
A
V
μ
A
V
m
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
GS
=
±
12V, V
DS
=0V
I
D
=
1mA, V
GS
=0V
V
DS
=
20V, V
GS
=0V
V
DS
=
10V, I
D
=
1mA
I
D
=
1.5A, V
GS
=
4.5V
I
D
=
1.5A, V
GS
=
4V
I
D
=
0.75A, V
GS
=
2.5V
V
DS
=
10V, I
D
=
0.75A
V
DS
=
10V
V
GS
=0V
f=1MHz
I
D
=
0.75A
V
DD
15
V
V
GS
=
4.5V
R
L
=20
R
GS
=10
V
DD
15
V
V
GS
=
4.5V
I
D
=
1.5A
Typ.
Max.
Unit
Conditions
160
180
260
325
60
40
10
10
35
10
4.2
1.0
1.1
R
DS (on)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-starte
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Tum-on delay time
Rise time
Tum-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
!
Body diode
(Source-drain)
<
MOSFET
>
V
SD
1.2
V
I
S
=
0.75A, V
GS
=0V
V
F
I
R
0.45
200
V
μ
A
I
F
=1.0A
V
R
=20V
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
<
Di
>
Reverse leakage
!
Electrical characteristic curves
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
0
0.5
1
1.5
2
2.5
3
3.5
4
GATE-SOURCE VOLTAGE :
V
GS
(V)
Fig.1
Typical Transfer Characteristics
0.001
0.01
D
I
D
10
0.1
1
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
=
25
°
C
V
DS
=
10V
Pulsed
0.1
1
10
10
100
DRAIN CURRENT :
I
D
(A)
Fig.2
Static Drain-Source On-State
Resistance vs. Drain Current (
Ι
)
1000
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
=
25
°
C
V
GS
=
4.5V
Pulsed
S
O
R
D
)
0.1
1
10
10
100
DRAIN CURRENT :
I
D
(A)
Fig.3
Static Drain-Source On-State
Resistance vs. Drain Current (
ΙΙ
)
1000
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
=
25
°
C
V
GS
=
4V
Pulsed
S
O
R
D
)
0.1
1
10
10
100
DRAIN CURRENT :
I
D
(A)
Fig.4
Static Drain-Source On-State
Resistance vs. Drain Current (
ΙΙΙ
)
1000
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
=
25
°
C
V
GS
=
2.5V
Pulsed
S
O
R
D
)
0
2
4
6
8
10
12
0
50
100
150
200
250
300
350
GATE-SOURCE VOLTAGE :
V
GS
(
V)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
400
I
D
=
0.75A
I
D
=
1.5A
Ta
=
25
°
C
Pulsed
S
O
R
D
)
0.1
1
10
10
100
DRAIN CURRENT :
I
D
(A)
Fig.6
Static Drain-Source On-State
Resistance vs. Drain Current (
)
1000
V
GS
=
2.5V
V
GS
=
4.0V
V
GS
=
4.5V
Ta
=
25
°
C
Pulsed
S
O
R
D
)
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