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參數(shù)資料
| 型號： | QS6M4 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Small switching |
| 中文描述： | 小開關(guān) |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 75K |
| 代理商： | QS6M4 |
QS6M4
Transistors
Small switching
1/5
QS6M4
z
Features
1) The QS6M4 combines Pch Trench MOSFET with a
Nch Trench MOSFET in a single TSMT6 package.
2) Pch Trench MOSFET and Nch Trench MOSFET
have a low on-state resistance with a fast switching.
3) Pch Trench MOSFET is neucted a low voltage drive
(2.5V).
z
Applications
Load switch, inverter
z
Structure
Silicon P-channel MOS FET
Silicon N-channel MOS FET
z
Packaging specifications
z
External dimensions
(Unit : mm)
Each lead has same dimensions
TSMT6
Abbreviated symbol :
M04
0
0
2
2.8
1.6
0
(
(
(
(
(
(
1pin mark
Package
Code
Taping
TR
3000
Basic ordering unit (pieces)
QS6M4
Type
z
Absolute maximum ratings
(Ta=25
°
C)
Parameter
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Symbol
°
C
°
C
Nchannel
30
12
±
1.5
±
6.0
0.8
6.0
150
55 to
+
150
Pchannel
20
12
±
1.5
±
6.0
0.75
6.0
Limits
Unit
Pw
≤
10
μ
s, Duty cycle
≤
1%
z
Thermal resistance
(Ta=25
°
C)
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Pulsed
Source current
(Body diode)
V
V
A
A
A
A
W
1.25
z
Equivalent circuit
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
2
2
1
1
(1)
(6)
(5)
(4)
(2)
(3)
Rth (ch-a)
100
Parameter
Symbol
Limits
Unit
°
C / W
Channel to ambient
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QS6U22 | Small switching (−20V, −1.5A) |
| QS6U24 | Small switching (−30V, −1A) |
| QS7201-10JRI | x9 Asynchronous FIFO |
| QS7201-10P | x9 Asynchronous FIFO |
| QS7201-10PI | x9 Asynchronous FIFO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QS6M4_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:2.5V Drive Nch+Pch MOSFET |
| QS6M4TR | 功能描述:MOSFET N+P 30 20V 1.5A TSMT6 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| QS6U22 | 制造商:ROHM 制造商全稱:Rohm 功能描述:2.5V Drive Pch+SBD MOS FET |
| QS6U22_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:2.5V Drive Pch+SBD MOS FET |
| QS6U22TR | 功能描述:MOSFET P-CH 20V 1.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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