參數(shù)資料
型號: QSB363.GR
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 光敏三極管
英文描述: PHOTO TRANSISTOR DETECTOR
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 1/5頁
文件大小: 84K
代理商: QSB363.GR
2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
November 2005
QSB363 Rev. 1.0.2
QSB363
Subminiature
Plastic
Silicon
Infrared
Phototransistor
QSB363
Subminiature Plastic Silicon Infrared Phototransistor
Features
■ NPN Silicon Phototransistor
■ T-3/4 (2mm) Surface Mount Package
■ Medium Wide Beam Angle, 24°
■ Black Plastic Package
■ Matched Emitters: QEB363 or QEB373
■ Daylight Filter
■ Tape & Reel Option (See Tape & Reel Specications)
■ Lead Form Options: Gullwing, Yoke, Z-Bend
Description
The QSB363 is a silicon phototransistor encapsulated in a black
infrared transparent T-3/4 package.
Package Dimensions
SCHEMATIC
EMITTER
COLLECTOR
0.074 (1.9)
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.024 (0.6)
0.016 (0.4)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
0.276 (7.0)
MIN
0.024 (0.6)
.059 (1.5)
.051 (1.3)
.118 (3.0)
.102 (2.6)
EMITTER
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of
± .010 (.25) on all non nominal dimensions
unless otherwise specified.
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