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參數(shù)資料
| 型號： | QSB363.GR |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 84K |
| 代理商： | QSB363.GR |
2
www.fairchildsemi.com
QSB363 Rev. 1.0.2
QSB363
Subminiature
Plastic
Silicon
Infrared
Phototransistor
Absolute Maximum Ratings (TA = 25°C unless otherwise specied)
Notes
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA ux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Pulse conditions: tp = 100 s, T = 10 ms.
5. D = 940 nm, GaAs.
Electrical/Optical Characteristics (TA =25°C)
Parameter
Symbol
Rating
Unit
Operating Temperature
TOPR
-25 to +85
°C
Storage Temperature
TSTG
-40 to +85
°C
Soldering Temperature (Iron)(2,3,4)
TSOL
260
°C
Soldering Temperature (Flow)(2,3)
TSOL
260
°C
Collector Emitter Voltage
VCEO
30
V
Emitter Collector Voltage
VECO
5V
Power Dissipation(1)
PC
75
mW
Parameters
Test Conditions
Symbol
Min.
Typ.
Max
Units
Peak Sensitivity Wavelength
λP
—
940
—
nm
Reception Angle
Θ
—±12
—
Collector Dark Current
VCE = 20V, Ee = 0mW/cm
2
ICEO
——
100
nA
Collector-Emitter Breakdown Voltage
IC = 100 A, Ee = 0mW/cm
2
BVCEO
30
—
V
Emitter-Collector Breakdown Voltage
IE = 100 A, Ee = 0mW/cm
2
BVECO
5—
—
V
On-State Collector Current
VCE = 5V
Ee = 1 mW/cm2
IC(on)
1.0
1.5
—
mA
Collector-Emitter Saturation Voltage
IC = 2 mA
Ee = 1 mW/cm2
VCE (SAT)
——
0.4
V
Rise Time
Fall Time
VCE = 5 V,
IC = 1 mA
RL = 1000
tr
tf
—
15
—
s
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