參數(shù)資料
型號: QSB363
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 光敏三極管
英文描述: SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR
中文描述: PHOTO TRANSISTOR DETECTOR
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 1/5頁
文件大小: 129K
代理商: QSB363
PACKAGE DIMENSIONS
SUBMINIATURE PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
SCHEMATIC
EMITTER
COLLECTOR
0.074 (1.9)
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.024 (0.6)
0.016 (0.4)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
0.276 (7.0)
MIN
0.024 (0.6)
.059 (1.5)
.051 (1.3)
.118 (3.0)
.102 (2.6)
EMITTER
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
QSB363
2001 Fairchild Semiconductor Corporation
DS300357
8/2/01
1 OF 5
www.fairchildsemi.com
DESCRIPTION
The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package.
FEATURES
NPN Silicon Phototransistor
T-3/4 (2mm) Surface Mount Package
Medium Wide Beam Angle, 24°
Black Plastic Package
Matched Emitters: QEB363 or QEB373
Daylight Filter
Tape & Reel Option (See Tape & Reel Specifications)
Lead Form Options: Gullwing, Yoke, Z-Bend
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QSB363 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORS PHOTO ROHS COMPLIANT:NO
QSB363_05 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Subminiature Plastic Silicon Infrared Phototransistor
QSB363_Q 功能描述:光電晶體管 T-3/4 PHOTO SENSOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
QSB363C 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Subminiature Plastic Silicon Infrared Phototransistor
QSB363C_05 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Subminiature Plastic Silicon Infrared Phototransistor