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參數(shù)資料
| 型號： | QSB363 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 129K |
| 代理商： | QSB363 |
R
Wavelength
D
(nm)
0
20
40
60
80
100
400
500
600
700
800
900
1000
1100
Fig. 5 Spectral Sensitivity
100
90
80
70
60
50
40
30
20
10
0
-25
0
25
50
75
85
100
Ambient Temperature T
A
(C)
Ambient Temperature T
A
(C)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
C
D
Fig. 3 Relative Collector Current vs.
Ambient Temperature
R
Ambient Temperature T
A
(C)
0
20
40
60
80
100
0
10
20
30
40
50
60
70
120
140
160
V
= 5 V
Ee=1 mW/cm2
7
6
5
4
3
2
1
0
0
1
2
3
4
C
C
Collector Emitter Voltage VCE (V)
Fig. 6 Collector Current vs.
Collector Emitter Voltage
Fig. 4 Collector Current vs.
Irradiance
C
C
Irradiance Ee (mW/cm2)
0.1
0.2
0.5
1
2
5
10
20
20
0.2
2
5
10
1
0.5
0.1
V
CE
= 5 V
T
A
= 25
Fig. 2 Collector Dark Current vs.
Ambient Temperature
10
10
10
6
10
7
10
8
10
9
2
5
2
5
2
5
2
5
C
0
25
50
75
100
SUBMINIATURE PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSB363
TYPICAL PERFORMANCE CURVES
DS300357
8/2/01
3 OF 5
www.fairchildsemi.com
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| QSC112 | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| QSB363 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORS PHOTO ROHS COMPLIANT:NO |
| QSB363_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Subminiature Plastic Silicon Infrared Phototransistor |
| QSB363_Q | 功能描述:光電晶體管 T-3/4 PHOTO SENSOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSB363C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Subminiature Plastic Silicon Infrared Phototransistor |
| QSB363C_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Subminiature Plastic Silicon Infrared Phototransistor |
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