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參數(shù)資料
| 型號(hào)： | QSD123 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | QSD123 |
Parameter
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
CE
V
EC
P
D
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
30
5
100
Unit
°C
°C
°C
°C
V
V
mW
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
(1)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Peak Sensitivity Wavelength
Reception Angle
Collector Emitter Dark Current
Collector Emitter Breakdown
Emitter Collector Breakdown
On-State Collector Current
(5)
QSD122
QSD123
QSD124
Saturation Voltage
(5)
Rise Time
Fall Time
TEST CONDITIONS
SYMBOL
!
PS
"
I
CEO
BV
CEO
BV
ECO
MIN
—
—
—
30
5
TYP
880
±12
—
—
—
MAX
—
—
100
—
—
UNITS
nm
Deg.
nA
V
V
V
CE
= 10 V, E
e
= 0
I
C
= 1 mA
I
E
= 100 μA
1.00
4.00
6.00
—
—
—
—
—
—
—
7
7
6.00
16.00
—
0.4
—
—
E
e
= 0.5 mW/cm
2
, V
CE
= 5 V
I
C (ON)
mA
E
e
= 0.5 mW/cm
2
, I
C
= 0.5 mA
V
CE (SAT)
t
r
t
f
V
V
CC
= 5 V, R
L
= 100 V I
C
= 0.2 mA
μs
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25°C)
NOTE:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16”
(1.6mm) minimum from housing.
5.
!
= 880 nm, AlGaAs.
www.fairchildsemi.com
2 OF 4
7/20/01
DS300361
PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
QSD122
QSD123
QSD124
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QSD123 | PLASTIC SILICON PHOTOTRANSISTOR |
| QSD124 | PLASTIC SILICON PHOTOTRANSISTOR |
| QSD122 | PLASTIC SILICON PHOTOTRANSISTOR |
| QSD128 | PLASTIC SILICON PHOTOTRANSISTOR |
| QSD2030F | Plastic Silicon Photodiode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QSD123_Q | 功能描述:光電晶體管 4mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSD123A4R0 | 功能描述:光電晶體管 Phototrans IR Chip NPN Transistor 880nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSD124 | 功能描述:光電晶體管 6mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSD124_Q | 功能描述:光電晶體管 6mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSD124A4R0 | 功能描述:光電晶體管 QSD124 T-R RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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