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參數(shù)資料
| 型號： | RC28F160C3BD70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PBGA64 |
| 封裝： | BGA-64 |
| 文件頁數(shù)： | 29/72頁 |
| 文件大?。?/td> | 1083K |
| 代理商： | RC28F160C3BD70 |
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Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Order Number: 290645, Revision: 023
35
8.0
Power and Reset Specifications
Intel
flash devices have a tiered approach to power savings that can significantly reduce overall
system power consumption. The Automatic Power Savings (APS) feature reduces power
consumption when the device is selected but idle. If CE# is deasserted, the flash enters its standby
mode, where current consumption is even lower. If RP# is deasserted, the flash enter deep power-
down mode for ultra-low current consumption. The combination of these features can minimize
memory power consumption, and therefore, overall system power consumption.
8.1
Active Power (Program/Erase/Read)
With CE# at a logic-low level and RP# at a logic-high level, the device is in the active mode. Refer
to the DC Characteristic tables for ICC current values. Active power is the largest contributor to
overall system power consumption. Minimizing the active current could have a profound effect on
system power consumption, especially for battery-operated devices.
8.2
Automatic Power Savings (APS)
Automatic Power Savings provides low-power operation during read mode. After data is read from
the memory array and the address lines are idle, APS circuitry places the device in a mode where
typical current is comparable to ICCS. The flash stays in this static state with outputs valid until a
new location is read.
8.3
Standby Power
When CE# is at a logic-high level (VIH), the flash memory is in standby mode, which disables
much of the device’s circuitry and substantially reduces power consumption. Outputs are placed in
a high-impedance state independent of the status of the OE# signal. If CE# transitions to a logic-
high level during Erase or Program operations, the device will continue to perform the operation
and consume corresponding active power until the operation is completed.
System engineers should analyze the breakdown of standby time versus active time and quantify
the respective power consumption in each mode for their specific application. This approach will
provide a more accurate measure of application-specific power and energy requirements.
8.4
Deep Power-Down Mode
The deep power-down mode is activated when RP# = VIL. During read modes, RP# going low de-
selects the memory and places the outputs in a high-impedance state. Recovery from deep power-
down requires a minimum time of tPHQV for read operations, and tPHWL/tPHEL for write operations.
During program or erase modes, RP# transitioning low aborts the in-progress operation. The
memory contents of the address being programmed or the block being erased are no longer valid as
the data integrity has been compromised by the abort. During deep power-down, all internal
circuits are switched to a low-power savings mode (RP# transitioning to VIL or turning off power
to the device clears the Status Register).
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| RC28F160C3BD70A | 功能描述:IC FLASH 16MBIT 70NS 64BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| RC28F160C3TA110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TA90SB93 | 功能描述:IC FLASH 16MBIT 90NS 64BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
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