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參數(shù)資料
| 型號： | RC28F160C3BD70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PBGA64 |
| 封裝： | BGA-64 |
| 文件頁數(shù)： | 36/72頁 |
| 文件大?。?/td> | 1083K |
| 代理商： | RC28F160C3BD70 |
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Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Order Number: 290645, Revision: 023
41
10.0
Modes of Operation
10.1
Read Mode
The flash memory has four read modes (read array, read identifier, read status, and CFI query) and
two write modes (program and erase). Three additional modes (erase suspend to program, erase
suspend to read, and program suspend to read) are available only during suspended operations.
Descriptions” on page 47 summarize the commands used for these modes.
Appendix A, “Write State Machine States” on page 54 is a comprehensive chart showing the state
transitions.
10.1.1
Read Array
When RP# transitions from VIL (reset) to VIH, the device defaults to read-array mode and will
respond to the read-control inputs (CE#, address inputs, and OE#) without any additional CUI
commands.
When the device is in read array mode, four control signals control data output.
WE# must be logic high (V
IH)
CE# must be logic low (V
IL)
OE# must be logic low (VIL)
RP# must be logic high (VIH)
In addition, the address of the desired location must be applied to the address pins. If the device is
not in read-array mode, as would be the case after a Program or Erase operation, the Read Array
command (0xFF) must be issued to the CUI before array reads can occur.
10.1.2
Read Identifier
The read-identifier mode outputs three types of information: the manufacturer/device identifier, the
block locking status, and the protection register. The device is switched to this mode by issuing the
Read Identifier command (0x90). Once in this mode, read cycles from addresses shown in Table 21
retrieve the specified information. To return to read-array mode, issue the Read Array command
(0xFF).
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相關(guān)代理商/技術(shù)參數(shù) |
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| RC28F160C3BD70A | 功能描述:IC FLASH 16MBIT 70NS 64BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
| RC28F160C3TA110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TA90SB93 | 功能描述:IC FLASH 16MBIT 90NS 64BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
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