參數(shù)資料
型號(hào): RES100N03
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直| 10A條(?。﹟蘇
文件頁數(shù): 1/4頁
文件大小: 41K
代理商: RES100N03
RES100N03
Transistors
Switching (30V, 10A)
RES100N03
z
Features
1) Low Qg.
2) Low on-resistance.
3) Exellent resistance to damage from static electricity.
z
Structure
Silicon N-channel
MOS FET
z
Equivalent circuit
(1)
Source
(2)
Source
(3)
Source
(4)
Gate
(5)
Drain
(6)
Drain
(7)
Drain
(8)
Drain
(1) (2) (3)
(8) (7) (6) (5)
(8) (7) (6) (5)
(1) (2) (3) (4)
(4)
Gate Protection Diode.
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
z
External dimensions
(Units : mm)
ROHM : SOP8
3.9
0.15
6.0
0.3
1.5
0.1
0.15
Max.1.75
0.5
0.1
5
0
1
0
0
0
0
0
(1)
(4)
(8)
(5)
Each lead has same dimensions
z
Absolute maximum ratings
(Ta = 25
°
C)
30
±
20
10
40
10
40
1.3
5.2
2
150
55~
+
150
V
DSS
V
GSS
I
DR
P
D
Tch
V
V
A
A
W
°
C
°
C
I
D
I
DRP
A
I
DP
A
I
s
I
sp
A
A
Tstg
Symbol
Limits
Unit
Parameter
PW
10
μ
s, Duty cycle
1%
Drain-Source Voltage
Storage Temperature
Channel Temperature
Total Power Dissipation (TC
=
25
°
C
)
Source Current
(Body Diode)
Reverse Drain
Current
Drain Current
Gate-Source Voltage
Pulsed
Continuous
Pulsed
Continuous
Pulsed
Continuous
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RES5-F03 FILTER CHASSIS OHNE IEC EINGANG 3A
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