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參數(shù)資料
| 型號： | RES100N03 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 10A條（?。﹟蘇 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 41K |
| 代理商： | RES100N03 |
RES100N03
Transistors
z
Thermal resistance
(Ta = 25
°
C)
Rth (ch-A)
62.5
°
C
/ W
Symbol
Limits
Unit
Parameter
Channel to Ambient
z
Electrical characteristics
(Ta = 25
°
C)
μ
A
pF
m
S
V
μ
A
V
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
GS
=
0V
f
=
1MHz
I
D
=
5A, V
DD
5V
V
DS
=
10V
V
GS
=
10V
R
L
=
3
R
GS
=
10
V
DD
=
15V
V
GS
=
10V
I
D
=
10A, V
GS
=
10V
I
D
=
10A, V
GS
=
4.5V
I
D
=
10A, V
GS
=
4V
I
D
=
10A, V
DS
=
10V
I
D
=
1mA, V
GS
=
0V
V
DS
=
30V, V
GS
=
0V
V
GS
=
±
20V, V
DS
=
0V
V
DS
=
10V, I
D
=
1mA
Parameter
Test Conditions
Unit
Min.
Max.
Typ.
I
GSS
I
DSS
l Y
fs
l
C
iss
Symbol
C
oss
C
rss
t
r
t
f
Q
gd
Q
gs
Q
g
V
(BR)DSS
V
GS
(th)
R
DS
(on)
t
d
(on)
t
d
(off)
Pulsed
Static Drain-Source On-State
Resistance
Gate-Drain Charge
Gate-Source Charge
Total Gate Charge
Fall Time
Turn-Off Delay Time
Rise Time
Turn-On Delay Time
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Forward Transfer Admittance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
Gate-Source Leakage
30
10
13
20
21
15
16
1600
900
280
17
50
75
55
57.0
28.5
4.9
5.8
1.0
10
±
10
1
2.5
I
D
=10A
z
Body diode characteristics (Source-Drain Characteristics)
(Ta = 25
°
C)
Parameter
Test Conditions
V
Unit
ns
nC
Min.
260
290
Typ.
1.5
Max.
I
DR
=
5.2A, V
GS
=
0V
I
s
=
5.2A, V
GS
=
0V
di/dt
=
100A/
μ
s
V
SD
t
rr
Q
rr
Symbol
Pulsed
Reverse Recovery Charge
Reverse Recovery Time
Forward Voltage
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