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參數(shù)資料
| 型號(hào)： | RF_PABASESTATION |
| 英文描述： | Novel Material for Improved Quality of RF-PA in Base-Station Applications |
| 中文描述： | 新型材料的質(zhì)量改進(jìn)的射頻在基地的PA -站的應(yīng)用 |
| 文件頁數(shù)： | 7/7頁 |
| 文件大小： | 2057K |
| 代理商： | RF_PABASESTATION |
The mesh model is shown in Fig 7a. As a first step, the thermal distribution in the component is
calculated and compared to the results of IR measurements to validate the model. As a second step, the
thermal distribution is used as the load in the stress calculations. In both types of FE-analysis, temperature
dependent properties are used and structural non-linearity is not included. To reduce the number of
simulations, a surface response model was constructed for calculating the maximum temperature and
stress of the component. The surface response model was constructed by running 27 FE-simulations and
by using a design of experiment technique [2]. In the model, the component flange bending phenomena
were also included because of its influence on the silicon die. The simulation results are given in Fig 7.
DISUSION AND CONCLUSION
The quality and reliability of the RF-PA with novel materials and manufacturing technology were
examined under elevated junction temperatures. Both temperature field and RF electrical performances
were measured for the two types of RF-PAs over longer period of time and a set of loading conditions.
Covered temperature ranges were
T
jmax
=160
225
o
C and
T
c
=70
110
o
C for the junction and case
temperatures, respectively. The most sensitive limiting factors observed at elevated temperatures were RF
electrical properties (power, gain, linearity). For the Cu-laminate components, at junction temperatures of
T
jmax
=160
180
o
C, the RF gain was stable over 1.5 months of continuous RF loading and has not indicated
potential risks. At
T
jmax
=200
o
C, a small drop of about 0,5 dB was observed after 1.5 months of continuous
severe loadings. In the harsh temperature case (continuous at
T
jmax
=225
o
C), the drop in the RF gain was
significant. When the WCu components were tested in a similar way, changes of the RF properties were
slightly larger. At the most severe temperature conditions (continuous
T
jmax
=225
o
C) observed drop in the
RF gain was noticeable, drop was more than 1 dB after 1.5 months of continuous loadings. In the
development of Cu-laminate flange structures, a trade-off existed between achieving higher
K
th
and still
preserving desired mechanical properties. Optimized mechanical properties of the flange provided desired
flatness for the Cu-laminate flange; this enabled further lowering of the interfacial thermal resistance
between the RF-PA transistor flange and the next level heat-sink. Such coordinated improvements that
include careful device layout, Si die thinning to 100
μ
m, high
K
th
Cu-laminate flange material, robust
AuSi die-attach, and the flange’s flatness resulted in nearly 18%-35% reduction in
R
jc
compared to
components manufactured with the conventional high thermal conductivity WCu flanges. The Cu-
laminate flange based RF-PA device offers the possibility of 10-15% higher P1dB (RF output power)
compared to the standard device.
The validated FE simulations and corresponding stress analysis showed that the thermomechanical
stresses experienced even in the most severe loading conditions (
T
jmax
=225
°
C) are within safe margins for
both types of the RF-PAs
[
3
]
. However, upper limits are imposed by RF-PA properties suggesting that
maximal operating temperature should not exceed
T
jmax
=200
o
C. This value reflects the limiting factors
involved by the present design of the RF-PA, its constellation of the thermal resistances and usual
mounting practices. As a conclusion, we would like to emphasize that usage of novel materials in
combination with cost effective manufacturing technology yielded in extended operational window and
larger functional capacity for the new Cu-laminate RF-PA components. These features provide good
opportunity for applications in base station environment.
References:
[
1
]
Nick Strobel, Chapter 12 “The Sun and Stellar Structure”, http://www.astronomynotes.com
[
2
]
Eriksson L., Design of experiments principles and applications. Sweden: Umetrics/Umea; 2001.
[
3
]
Fischer E., Upper yield point of large diameter silicon, Microelectron Eng 2001;56:117.
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