參數(shù)資料
型號： RF1S25N06SM9A
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-263AB
中文描述： 晶體管| MOSFET的| N溝道| 60V的五（巴西）直|第25A條（?。﹟對263AB
文件頁數(shù)： 2/8頁
文件大?。?/td> 418K
代理商： RF1S25N06SM9A
2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev. C
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP25N06,
RF1S25N06, RF1S25N06SM
60
60
±
20
25
(Figure 5)
(Figure 6)
72
0.48
-55 to 175
UNITS
V
V
V
A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
DSS
DGR
GS
D
DM
AS
D
W
W/
o
C
J
, T
STG
o
C
L
pkg
300
260
o
o
C
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
60
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60V
T
C
= 25
o
C
-
-
1
μ
A
V
GS
= 0V
T
C
= 150
o
C
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 25A, V
GS
= 10V (Figure 9)
-
-
0.047
Turn-On Time
t
ON
V
R
R
(Figure 13)
DD
L
= 2.4
GS
= 30V, I
= 10
D
GS
= 12.5A
= 10V
, V
-
-
60
ns
Turn-On Delay Time
t
d(ON)
-
14
-
ns
Rise Time
t
r
-
30
-
ns
Turn-Off Delay Time
t
d(OFF)
-
45
-
ns
Fall Time
t
f
-
22
-
ns
Turn-Off Time
t
OFF
-
-
100
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0 to 20V
V
R
I
g(REF)
(Figure 13)
DD
L
= 48V, I
= 1.92
= 0.75mA
D
= 25A,
-
-
80
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0 to 10V
-
-
45
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0 to 2V
-
-
3
nC
Input Capacitance
C
ISS
V
f = 1MHz
(Figure 12)
DS
= 25V, V
GS
= 0V
-
975
-
pF
Output Capacitance
C
OSS
-
330
-
pF
Reverse Transfer Capacitance
C
RSS
-
95
-
pF
Thermal Resistance Junction to Case
R
θ
JC
(Figure 3)
-
-
2.083
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
-
-
62
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 25A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 25A, dI
SD
/dt = 100A/
μ
s
-
-
125
ns
RFP25N06, RF1S25N06, RF1S25N06SMS
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