參數(shù)資料
型號(hào)： RF1S530SM9A
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14A I(D) | TO-263AB
中文描述： 晶體管| MOSFET的| N溝道| 100V的五（巴西）直|第14A條（?。﹟對(duì)263AB
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 94K
代理商： RF1S530SM9A
2001 Fairchild Semiconductor Corporation
RF1S530SM Rev. A
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
= 0V (Figure 10)
= 250
μ
A
= 0V
= 0.8 x Rated BV
> I
D(ON)
x r
DS(ON) MAX
=
±
20V
= 8.3A, V
GS
= 10V (Figures 8, 9)
≥
50V, I
D
= 8.3A (Figure 12)
= 50V,
I
D
≈
14A, R
MOSFET Switching Times are Essentially
Independent of Operating Temperature
MIN
100
2
-
-
14
-
-
5.1
-
-
-
-
-
TYP
-
-
-
-
-
-
0.14
7.6
12
35
25
25
18
MAX
-
4.0
25
250
-
±
500
0.16
-
15
65
70
59
30
UNITS
V
V
μ
A
μ
A
A
nA
S
ns
ns
ns
ns
nC
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
I
V
V
V
V
V
I
D
V
V
D
= 250
= V
= 95V, V
μ
A, V
, I
GS
GS
DS
D
DS
GS
DS
DSS
, V
GS
, V
= 0V, T
= 10V
J
= 150
o
C
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
I
D(ON)
I
GSS
DS
GS
GS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
DS
DD
G
≈
12
, R
L
= 3.4
V
I
g(REF)
Gate Charge is Essentially Independent of
Operating Temperature
GS
= 10V, I
= 1.5mA (Figure 14)
D
= 14A, V
DS
= 0.8 x Rated BV
DSS
Q
Q
C
C
C
gs
-
-
-
-
-
-
4
7
-
-
-
-
-
-
nC
nC
pF
pF
pF
nH
gd
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
600
250
50
3.5
OSS
RSS
L
D
Measured from the
Contact Screw on Tab To
Center of Die
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
Measured from the Source
Lead, 6mm (0.25in) From
Header to Source Bonding
Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
-
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R
R
R
θ
JC
-
-
-
-
-
-
1.9
62.5
62
o
C/W
o
C/W
o
C/W
θ
JA
Free Air Operation
RF1S540SM Mounted on FR-4 Board with
Minimum Mounting Pad
θ
JA
L
S
L
D
G
D
S
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode
-
-
14
A
Pulse Source to Drain Current (Note 2)
I
SDM
-
-
56
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
o
C, I
o
C, I
SD
= 14A, V
GS
= 0V (Figure 13)
-
-
2.5
V
Reverse Recovery Time
T
J
= 25
SD
= 14A, dI
SD
/dt = 100A/
μ
μ
s
5.5
120
250
ns
μ
C
Reverse Recovery Charge
T
J
= 25
SD
= 14A, dI
SD
/dt = 100A/
s
0.17
0.6
1.3
NOTES:
2. Pulse test: pulse width
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
C, L = 530
μ
H, R
≤
300
μ
s, duty cycle
≤
2%.
o
G
= 25
, peak I
AS
= 14A (Figures 15, 16).
G
D
S
RF1S530SM
相關(guān)PDF資料
PDF描述
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