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參數(shù)資料
| 型號(hào)： | RF1S540SM9A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 28A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 28A條（丁）|對(duì)263AB |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | RF1S540SM9A |
2001 Fairchild Semiconductor Corporation
RF1S530SM Rev. A
File Number
1575.8
RF1S530SM
14A, 100V, 0.160 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17411.
Features
14A, 100V
r
DS(ON)
= 0.160
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1S530SM
TO-263AB
RF1S530
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
RF1S530SM9A.
G
D
S
DRAIN
(FLANGE)
GATE
SOURCE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RF1S530SM
100
100
14
10
56
±
20
79
0.53
69
-55 to 175
UNITS
V
V
A
A
A
V
W
W/
mJ
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
T
C
= 100
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
DS
DGR
D
D
o
DM
GS
D
o
C
AS
J,
T
STG
L
pkg
300
260
o
o
C
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Data Sheet
February 2001
[ /Title
(RF1S
530SM
)
/Sub-
ject
(14A,
100V,
0.160
Ohm,
N-
Chan-
nel
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(14A,
100V,
0.160
Ohm,
N-
Chan-
nel
Power
MOS-
FETs,
Inter-
sil
Corpo-
ration,
TO-
263AB
)
/Cre-
ator ()
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