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參數(shù)資料
| 型號(hào)： | RF1S540SM9A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 28A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 28A條（?。﹟對(duì)263AB |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | RF1S540SM9A |
2001 Fairchild Semiconductor Corporation
RF1S530SM Rev. A
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
, DRAIN CURRENT (A)
g
f
,
0
0
5
10
15
20
2
4
6
8
10
25
175
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
≥
50V
0
0.8
1.2
1.6
2.0
0.4
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
0.1
1
10
I
S
,
100
175
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Q
G
, GATE CHARGE (nC)
V
G
,
0
0
6
12
18
24
4
8
12
16
20
30
I
D
= 14A
V
DS
= 50V
V
DS
= 80V
V
DS
= 20V
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RF1S530SM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S60P03 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs |
| RF1S60P03SM | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs |
| RF1S60P03SM9A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 60A I(D) | TO-263AB |
| RF1S630 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S630SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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