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參數(shù)資料
| 型號： | RF3160 |
| 廠商： | RF Micro Devices, Inc. |
| 英文描述： | DUAL-BAND GSM/DCS POWER AMP MODULE |
| 中文描述： | 雙頻GSM / DCS的功率放大器模塊 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 101K |
| 代理商： | RF3160 |
Preliminary
2-264
RF3160
Rev A4 010420
2
P
Pin
1
2
Function
GND
DCS IN
Description
Connects to module backside ground.
Interface Schematic
RF input to the DCS band. This is a 50
input, external DC-blocking
capacitor required. See application schematic.
Connects to module backside ground.
3
4
GND
GSM IN
RF input to the GSM band. This is a 50
input. No external DC-block-
ing capacitor required. See application schematic.
Connects to module backside ground.
5
6
GND
VCC
Power supply for stages 1 and 2 of both the GSM and DCS power
amplifiers. External low frequency bypassing capacitor required. See
application schematic.
Connects to module backside ground.
7
8
GND
VCC
Power supply for output stages of both the GSM and DCS power ampli-
fiers. External low frequency bypassing capacitor required. See appli-
cation schematic.
Connects to module backside ground.
9
10
GND
GSM OUT
RF output for the GSM band. This is a 50
output. External DC-block-
ing capacitor required. See application schematic.
Connects to module backside ground.
11
12
GND
DCS OUT
RF output for the DCS band. This is a 50
output. External DC-block-
ing capacitor required. See application schematic.
Connects to module backside ground.
13
14
15
16
GND
VAPC
GND
BAND
SELECT
GND
Single input analog power control voltage for the GSM and DCS band.
Connects to module backside ground.
Logic low (GSM enable) or logic high (DCS enable) provides single IO
band selection.
Pkg
Base
Module backside ground.
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