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參數(shù)資料
| 型號： | RFP8N20 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 38K |
| 代理商： | RFP8N20 |
6-280
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. FORWARD BIAS SAFE OPERATING AREA
FIGURE 3. SATURATION CHARACTERISTICS
FIGURE 4. TRANSFER CHARACTERISTICS
FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
100
1000
10
1
V
DS
, DRAIN TO SOURCE (V)
0.1
1
10
100
I
D
,
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
DC OPERATION
60W
T
C
= 25
o
C
T
J
= MAX RATED
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0
.
5% MAX
0
3
4
5
6
7
I
D
D
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 2V
24
V
GS
= 5V
2
1
V
GS
= 4V
20
16
12
8
4
0
T
C
= 25
o
C
V
GS
= 10V
-40
o
C
25
o
C
125
o
C
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0
.
5% MAX
I
D
,
12
8
4
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
16
0
125
o
C
-40
o
C
0
5
10
15
20
I
D,
DRAIN CURRENT (A)
1.2
1.0
0.8
0.6
0.4
0.2
0
r
D
,
-40
o
C
25
o
C
125
o
C
V
DS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0
.
5% MAX.
R
)
1.5
1.0
0.5
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 4A, V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
N
2.0
0
O
RFP8N20L
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RFP8N20L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL LOGIC LEVEL POWER FIELD EFFECT TRANSISTORS |
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| RFP8P06E | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFP8P06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP8P08 | 制造商:Harris Corporation 功能描述:MOSFET Transistor, P-Channel, TO-220AB |
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