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參數(shù)資料
| 型號(hào)： | RFP8N20L |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL LOGIC LEVEL POWER FIELD EFFECT TRANSISTORS |
| 中文描述： | N溝道邏輯電平電源場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 38K |
| 代理商： | RFP8N20L |
6-278
File Number
1514.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP8N20L
8A, 200V 0.600 Ohm, Logic Level,
N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is specifically designed for use with logic
level (5V) driving sources in applications such as
programmable controllers, automotive switching and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic circuit
supply voltages.
Formerly developmental type TA09534.
Features
8A, 200V
r
DS(ON)
= 0.600
Design Optimized for 5V Gate Drives
Can be Driven Directly from QMOS, NMOS,
TTL Circuits
Compatible with Automotive Drive Requirements
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedence
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP8N20L
TO-220AB
RFP8N20L
NOTE: When ordering, include the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
July 1999
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| RFP8P05 | 功能描述:MOSFET TO-220AB P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP8P06E | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs |
| RFP8P06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP8P08 | 制造商:Harris Corporation 功能描述:MOSFET Transistor, P-Channel, TO-220AB |
| RFP8P10 | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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