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參數(shù)資料
| 型號： | RFP8N20L |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET |
| 中文描述： | 8 A, 200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 38K |
| 代理商： | RFP8N20L |
6-279
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP8N20L
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Above T
C
= 25
o
C, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
200
V
200
V
8
A
20
A
10
V
60
W
0.48
W/
o
C
o
C
-55 to 150
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0
200
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 0.8 x Rated BV
DSS
T
C
= 25
o
C
T
C
= 125
o
C
-
-
1
μ
A
V
DS
= 0.8 x Rated BV
DSS
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= 10V, V
DS
= 0
-
-
100
nA
Drain to Source On-Voltage (Note 2)
V
DS(ON)
I
D
= 8A, V
GS
= 5V
-
-
4.8
V
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 4A, V
GS
= 5V
-
-
0.600
Turn On Delay Time
t
d(ON)
I
D
= 4A, V
DD
= 50V, R
G
= 6.25 , V
GS
= 5V
-
15
45
ns
Rise Time
t
r
-
45
150
ns
Turn Off Delay Time
t
d(OFF)
-
100
135
ns
Fall Time
t
f
-
60
105
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1MHz
-
-
900
pF
Output Capacitance
C
OSS
-
-
250
pF
Reverse Transfer Capacitance
C
RSS
-
-
120
pF
Thermal Resistance Junction to Case
R
θ
JC
RFP8N20L
2.083
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 4A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
μ
s
-
250
-
ns
NOTES:
2. Pulsed: pulse duration = 300
μ
s max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFP8N20L
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