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參數(shù)資料
| 型號： | RFP8N20L |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET |
| 中文描述： | 8 A, 200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 38K |
| 代理商： | RFP8N20L |
6-280
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. FORWARD BIAS SAFE OPERATING AREA
FIGURE 3. SATURATION CHARACTERISTICS
FIGURE 4. TRANSFER CHARACTERISTICS
FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
100
1000
10
1
V
DS
, DRAIN TO SOURCE (V)
0.1
1
10
100
I
D
,
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
DC OPERATION
60W
T
C
= 25
o
C
T
J
= MAX RATED
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0
.
5% MAX
0
3
4
5
6
7
I
D
D
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 2V
24
V
GS
= 5V
2
1
V
GS
= 4V
20
16
12
8
4
0
T
C
= 25
o
C
V
GS
= 10V
-40
o
C
25
o
C
125
o
C
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0
.
5% MAX
I
D
,
12
8
4
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
16
0
125
o
C
-40
o
C
0
5
10
15
20
I
D,
DRAIN CURRENT (A)
1.2
1.0
0.8
0.6
0.4
0.2
0
r
D
,
-40
o
C
25
o
C
125
o
C
V
DS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0
.
5% MAX.
R
)
1.5
1.0
0.5
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 4A, V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
N
2.0
0
O
RFP8N20L
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