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參數(shù)資料
| 型號： | RG4BC10UD |
| 英文描述： | TRANSISTOR IGBT CO-PACK |
| 中文描述： | 晶體管IGBT的統(tǒng)籌包裝 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 191K |
| 代理商： | RG4BC10UD |
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
8.5
5.0
34
34
4.0
16
± 20
38
15
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
IRG4BC10UD
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Optimized for high operating
up to 80 kHz in hard switching, >200 kHz in
resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous Generation
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-220AB package
Benefits
Generation 4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
=
2.15V
@V
GE
= 15V, I
C
= 5.0A
t
f
(typ.) = 140ns
9/2/97
Absolute Maximum Ratings
PRELIMINARY
PD -9.1677A
W
TO-220AB
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
—
—
—
—
—
Typ.
—
—
0.50
—
2 (0.07)
Max.
3.3
7.0
—
80
—
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
°C/W
g (oz)
Thermal Resistance
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