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參數(shù)資料
| 型號： | RH80532NC033256 |
| 英文描述： | Microprocessor |
| 中文描述： | 微處理器 |
| 文件頁數(shù)： | 86/93頁 |
| 文件大小： | 2353K |
| 代理商： | RH80532NC033256 |
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Mobile Intel
Pentium
4 Processor-M
86
Datasheet
250686-002
6.1
Thermal Specifications
6.1.1
Thermal Diode
The Mobile Intel Pentium 4 Processor-M incorporates two methods of monitoring die temperature,
the Thermal Monitor and the thermal diode. The Thermal Monitor (detailed in
Section 6.1.2
) must
be used to determine when the maximum specified processor junction temperature has been
reached. The second method, the thermal diode, can be read by an off-die analog/digital converter
(a thermal sensor) located on the motherboard, or a stand-alone measurement kit. The thermal
diode may be used to monitor the die temperature of the processor for thermal management or
instrumentation purposes but cannot be used to indicate that the maximum T
J
of the processor has
been reached.
Table 38
and
Table 39
provides the diode interface and specifications.
Note:
The reading of the thermal sensor connected to the thermal diode does not reflect the temperature
of the hottest location on the die (T
J
). This is due to inaccuracies in the thermal diode, on-die
temperature gradients between the location of the thermal diode and the hottest location on the die,
and time based variations in the die temperature. Time based variations can occur since the
sampling rate of the sensor is much slower than the die level temperature changes.
The offset between the thermal diode based temperature reading and the hottest location of the die
(Thermal Monitor) may be characterized using the Thermal Monitor’s Automatic mode activation
of thermal control circuit. This temperature offset must be taken into account when using the
processor thermal diode to implement power management events.
Table 38. Thermal Diode Interface
Table 39. Thermal Diode Specifications
NOTES:
1. Intel does not support or recommend operation of the thermal diode under reverse bias.
2. Characterized at 100°C.
3. Not 100% tested. Specified by design characterization.
4. The ideality factor, n, represents the deviation from ideal diode behavior as exemplified by the diode
equation:
I
=I
*(e
-1)
Where I
= saturation current, q = electronic charge, V
D
= voltage across the diode, k = Boltzmann Constant,
and T = absolute temperature (Kelvin).
5. The series resistance, R
, is provided to allow for a more accurate measurement of the diode junction
temperature. R
as defined includes the pins of the processor but does not include any socket resistance or
board trace resistance between the socket and the external remote diode thermal sensor. R
can be used by
remote diode thermal sensors with automatic series resistance cancellation to calibrate out this error term.
Another application is that a temperature offset can be manually calculated and programmed into an offset
register in the remote diode thermal sensors as exemplified by the equation:
T
= [R
T
*(N-1)*I
]/[(nk/q)*ln N]
Where T
= sensor temperature error, N = sensor current ration, k = Boltzmann Constant, q = electronic
charge.
Signal Name
Pin/Ball Number
Signal Description
THERMDA
B3
Thermal diode anode
THERMDC
C4
Thermal diode cathode
Symbol
Parameter
Min
Typ
Max
Unit
Notes
I
FW
Forward Bias Current
5
300
μ
A
1
n
Diode Ideality Factor
1.0012
1.0021
1.0030
2, 3, 4
R
T
Series Resistance
3.86
ohms
2, 3, 5
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