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參數(shù)資料
| 型號： | RIC7113L4 |
| 英文描述： | Dual MOSFET Driver |
| 中文描述： | 雙MOSFET驅(qū)動器 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 148K |
| 代理商： | RIC7113L4 |
Features
n
Total dose capability to 100K Rad (Si)
n
Floating channel designed for bootstrap operation
n
Fully operational to +400V
n
Tolerant to negative transient voltage
n
dV/dt immune
n
Gate drive supply range from 10 to 20V
n
Undervoltage lockout for both channels
n
Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n
CMOS Schmitt-triggered inputs with pull-down
n
Cycle by cycle edge-triggered shutdown logic
n
Matched propagation delay for both channels
n
Outputs in phase with inputs
n
Hermetically Sealed
n
Lightweight
RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
Product Summary
VOFFSET
IO+/-
VOUT
ton/off (typ.)
Delay Matching(typ.)
400V max.
2A / 2A
10 - 20V
120 & 100 ns
5 ns
conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
dV
s
/dt
P
D
R
thJA
T
J
T
S
T
L
Parameter
Min.
-0.5
—
V
S
- 0.5
-0.5
-0.5
-0.5
V
CC
- 20
V
SS
- 0.5
—
—
—
-55
-55
—
Max.
V
S
+ 20
400
V
B
+ 0.5
20
V
CC
+ 0.5
V
SS
+ 20
V
CC
+ 0.5
V
DD
+ 0.5
50
1.6
125
125
150
300
Units
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Figure 2)
Package Power Dissipation @ T
A
￡
+25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Weight
V
V/ns
W
°C/W
°C
1.3 (typical)
g
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute
voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and
still air
Description
The RIC7113L4 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized mono-
lithic construction. Logic inputs are compatible with stan-
dard CMOS or LSTTL outputs. The output drivers feature
a high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The floating
channel can be used to drive an N-channel power MOSFET
or IGBT in the high side configuration which operates up
to 400 volts.
RIC7113L4
5/4/2000
www.irf.com
1
PD-93921
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