參數(shù)資料
型號: RIC7113L4
英文描述: Dual MOSFET Driver
中文描述: 雙MOSFET驅(qū)動器
文件頁數(shù): 3/9頁
文件大小: 148K
代理商: RIC7113L4
RIC7113L4
www.irf.com
3
Tj = 25°C
Tj =
-55 to 125°C
Symbol
Parameter
Min. Typ. Min.
Max.
Units
Test Conditions
V
IH
Logic “1” Input Voltage
3.1 — 3.3
VDD = 5V
VDD = 10V
VDD = 15V
VDD = 20V
VDD = 5V
VDD = 10V
VDD = 15V
VDD = 20V
V
IN
=V
IH,
I
O
= 0A
V
IN
=V
IH,
I
O
= 0A
V
B
= V
S
= 400V
V
IN
=0V
or V
DD
V
IN
=0V
,
or V
DD
V
IN
=0V
,
or V
DD
V
IN
= V
DD
V
IN
= 0V
6.4 — 6.8
9.5 — 10
V
12.5 — 13.3
V
IL
Logic “0” Input Voltage
— 1.8 —
1.7
— 3.8 —
3.6
— 6.0 —
5.7
V
— 8.3 —
7.9
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
QDD
I
IN+
I
IN-
V
BSUV+
High Level Output Voltage, V
BIAS
- V
O
Low Level Output Voltage, V
O
Offset Supply Leakage Current
— 1.2 —
1.5
— 0.1 —
0.1
— 50 —
250
Quiescent V
BS
Supply Current
Quiescent V
CC
Supply Current
Quiescent V
DD
Supply Current
Logic “1” Input Bias Current
— 230 —
500
μA
— 340 —
600
— 30 —
60
40 —
70
Logic “0” Input Bias Current
V
BS
Supply Undervoltage Positive
Going Threshold
V
BS
Supply Undervoltage Negative
Going Threshold
V
CC
Supply Undervoltage Positive
Going Threshold
V
CC
Supply Undervoltage Negative
Going Threshold
Output High Short Circuit Pulsed
Current
Output Low Short Circuit Pulsed
Current
— 1.0 —
7.5 9.7 —
10
V
BSUV-
7.0 9.4 —
V
CCUV+
7.4 9.6 —
V
V
CCUV-
7.0 9.4 —
I
O+
2.0 — —
V
O
= 0V, V
IN
= V
DD
PW
10 μs
V
O
= 15V, V
IN
= 0V
PW
10 μs
A
I
O-
2.0 — —
Static Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, unless otherwise specified. The VIN, VTH and IIN parameters are
referenced to VSS and are applicable to all three logic input pins: HIN, LIN and SD. The VO and IO
parameters are referenced to COM or VS and are applicable to the respective output pins: HO or LO.
Pre-Irradiation
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