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| 型號： | RMWM38001 |
| 英文描述： | Analog IC |
| 中文描述： | 模擬IC |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 119K |
| 代理商： | RMWM38001 |
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Parameter
Symbol
Value
Unit
RF Input Power (from 50
source)
Operating Baseplate Temperature
Storage Temperature Range
P
IN
T
C
T
stg
+25
dBm
°C
°C
-30 to +85
-55 to +125
The RMWM38001 is a 38 GHz Mixer designed to be used in point to point radios, point to multi-point
communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers,
multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWM38001 is a GaAs
MMIC diode mixer utilizing Raytheon’s 0.25μm power PHEMT process. The MMIC can be used as both an
Upconverter and a Downconverter and is sufficiently versatile to serve in a variety of mixer applications.
Absolute
Maximum
Ratings
Description
4 mil substrate
Conversion loss 5 dB (Upconverter)
Conversion loss 8 dB (Downconverter)
No DC bias required
Chip size 1.4 mm x 1.4 mm
Features
Notes:
1.
Device 100% RF tested as downconverter only. LO drive = +12 dBm, RF Pin = -10 dBm, IF = 5 GHz.
Electrical
Characteristics
(At 25°C),
50
system,
LO = +12 dBm
RMWM38001
38 GHz Mixer MMIC
Parameter
RF Frequency Range
LO Frequency Range
IF Frequency Range
LO Drive Power
Up Conversion Loss
Down Conversion Loss
1
Conversion Loss Variation
vs Freq
Min
37
Typ
Max
40
Unit
GHz
GHz
GHz
dBm
dB
dB
32 - 35
4.7 - 5.3
12
5
8
16
10
3
dB
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