
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
4 mil substrate
Conversion loss 14 dB (typ.)
No DC bias required
Chip size 1.8 mm x 1.05 mm
Features
The RMWT04001 is a 4 to 12 GHz Tripler designed to be used in the LO chain of point to point radios, point to
multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon
amplifiers, multipliers and mixers it forms part of a complete 23, 26 and 38 GHz transmit/receive chipset. The
RMWT04001 utilizes Raytheon’s 0.25 μm power PHEMT process and is sufficiently versatile to serve in a variety of
multiplier applications.
RMWT04001
4-12 GHz Tripler MMIC
Electrical
Characteristics
(At 25°C),
50
system,
Pin = +18 dBm
Parameter
Input Frequency Range
Output Frequency Range
Input Drive Power
Conversion Loss
Conversion Loss Variation
vs Freq
Min
2.8
8.4
+16
Typ
Max Unit
4.0
12.0 GHz
GHz
+18
14
dBm
16.5 dB
0.7
dB
Parameter
Fundamental Rejection
2nd Harmonic Rejection
4th Harmonic Rejection
5th Harmonic Rejection
Input Return Loss
(Pin = +18 dBm)
Min
Typ
-25
-20
-20
-30
Max Unit
dBc
dBc
dBc
dBc
10
dB
Absolute
Maximum
Ratings
Parameter
RF Input Power (from 50
source)
Operating Baseplate Temperature
Storage Temperature Range
Symbol
P
IN
T
C
T
stg
Value
+25
-30 to +85
-55 to +125
Units
dBm
°C
°C
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
Application
Information