參數(shù)資料
型號(hào): RMWT04001
英文描述: Analog IC
中文描述: 模擬IC
文件頁數(shù): 2/5頁
文件大?。?/td> 148K
代理商: RMWT04001
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Note:
Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Figure 3
Recommended
Assembly Diagram
Figure 2
Chip Layout and Bond
Pad Locations
Chip Size is 1.8 mm x
1.05 mm x100
μ
m. Back
of chip is RF ground
Dimensions in mm
0.0
0.0
0.0
0.0
1.05
1.05
1.8
1.8
0.592
0.448
0.592
0.448
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015”
(2 Places)
Die-Attach
80Au/20Sn
Figure 1
Functional Block
Diagram
MMIC Chip
RF OUT
RF IN
Ground
(Back of Chip)
X3
The following sequence must be followed to properly test the amplifier.
Step 1:
The RMWT04001 does not require DC bias.
Apply RF input signal at the appropriate
frequency band and input drive level.
Step 2:
Follow turn-off sequence of:
Turn off RF input power.
Recommended
Procedure
for Operation
RMWT04001
4-12 GHz Tripler MMIC
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