參數(shù)資料
型號: S-80728AN-DR-S
元件分類: 電源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PSSO3
封裝: SOT-89, 3 PIN
文件頁數(shù): 11/40頁
文件大?。?/td> 454K
代理商: S-80728AN-DR-S
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
18
Seiko Instruments Inc.
34. S-80743AL/AL-A7-X, S-80743AN/AN-D7-X (Detection voltage : 4.196 to 4.404 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
4.196
4.300
4.404
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V
1
Current consumption
ISS
VDD = 6.0 V
1.0
3.0
A
2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
VDD = 2.4 V
1.60
3.70
VDD = 3.6 V
3.18
7.00
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 6.0 V
0.46
0.75
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.54
mV/
°C
35. S-80744AL/AL-A8-X, S-80744AN/AN-D8-X, S-80744SN-D8-X (Detection voltage : 4.294 to 4.506 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
4.294
4.400
4.506
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V
1
Current consumption
ISS
VDD = 6.0 V
1.0
3.0
A
2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
VDD = 2.4 V
1.60
3.70
VDD = 3.6 V
3.18
7.00
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 6.0 V
0.46
0.75
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.55
mV/
°C
36. S-80744HL/HL-U8-X (Detection voltage : 4.295 to 4.605 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
4.295
4.450
4.605
V
1
Release voltage
+VDET
4.70
V
1
Current consumption
ISS
VDD = 6.0 V
2.6
6.0
A
2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
VDD = 2.4 V
1.60
3.70
Pch
VDS = 0.5 V
VDD = 4.8 V
0.36
0.62
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.56
mV/
°C
-V
DET
Ta
-V
DET
Ta
-V
DET
Ta
DISCONTINUED
PRODUCT
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